Method of fabricating a microfabricated high aspect ratio device with electrical isolation
US6960488B2 · kind B2 · utility
69Cited by
25References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microfabricated device having a high vertical aspect ratio and electrical isolation between a structure region and a circuit region. The device may be fabricated on a single substrate and may include electrical interconnections between the structure region and the circuit region. The device includes a substrate and an isolation trench surrounding a structure region in the substrate. The isolation trench includes a lining of a dielectric insulative material. A plurality of microstructure elements are located in the structure region and are laterally anchored to the isolation trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.