Erasing and programming an organic memory device and method of fabricating
US6960783B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2003 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | May 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/71
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An organic memory cell made of two electrodes with a selectively conductive media between the two electrodes is disclosed. The selectively conductive media contains an organic layer and passive layer. The selectively conductive media is programmed by applying bias voltages that program a desired impedance state for a memory cell. The desired impedance state represents one or more bits of information and the memory cell does not require constant power or refresh cycles to maintain the desired impedance state. Furthermore, the selectively conductive media is read by applying a current and reading the impedance of the media in order to determine the impedance state of the memory cell. Methods of making the organic memory devices/cells, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.