Recessed shallow trench isolation structure nitride liner and method for making same
US6960818B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1997 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Aug 26, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing hot carrier reliability problems within an integrated circuit device. The method includes forming a shallow trench isolation structure incorporated with the device by filling a trench with a photoresist plug and removing a portion of the photoresist plug to a level below the depth of a channel also incorporated with the device. A nitride liner disposed within the trench under the photoresist plug is then recessed to a level substantially equal to the level of the photoresist material, which is then removed. The method further includes the deposition of oxide fill within the trench, thereby encapsulating the recessed nitride liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.