System and method for one-time programmed memory through direct-tunneling oxide breakdown
US6960819B2 · kind B2 · utility
11Cited by
18References
20Claims
0Family size
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Key dates
| Filing date | Dec 20, 2000 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Dec 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A one-time programming memory element, capable of being manufactured in a 0.13 μm or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current, and a switch having a voltage tolerance higher than that of the capacitor/transistor, wherein the capacitor/transistor is one-time programmable as an anti-fuse by application of a voltage across the oxide layer via the switch to cause direct gate tunneling current to thereby rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.