Surya Battacharya
4Patents
2h-index
7Co-inventors
33Inventor score
Filing activity: Dec 20, 2000 → May 19, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6960819B2 | System and method for one-time programmed memory through direct-tunneling oxide breakdown | Electricity | 11 | Expired |
| US6985387B2 | System and method for one-time programmed memory through direct-tunneling oxide breakdown | Electricity | 9 | Expired |
| US6950355B2 | System and method to screen defect related reliability failures in CMOS SRAMS | Physics | 2 | Expired |
| US7009891B2 | System and method for one-time programmed memory through direct-tunneling oxide breakdown | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.