Semiconductor device and its production process
US6960832B2 · kind B2 · utility
20Cited by
7References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2004 |
| Grant date | Nov 1, 2005 |
| Priority date | — |
| Expiry date | Jan 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.