Patent · US Expired

Thin films and method of making them

US6962859B2 · kind B2 · utility

70Cited by
41References
40Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 11, 2002
Grant dateNov 8, 2005
Priority date—
Expiry dateMar 19, 2022

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/933
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon-containing precursor. In preferred embodiments, the methods result in Si-containing films that are continuous and have a thickness of about 150 Å or less, a surface roughness of about 5 Å rms or less, and a thickness non-uniformity of about 20% or less. Preferred silicon-containing films display a high degree of compositional uniformity when doped or alloyed with other elements. Preferred deposition methods provide improved manufacturing efficiency and can be used to make various useful structures such as wetting layers, HSG silicon, quantum dots, dielectric layers, anti-reflective coatings (ARC's), gate electrodes and diffusion sources.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.