Enhancement mode metal-oxide-semiconductor field effect transistor
US6963090B2 · kind B2 · utility
129Cited by
127References
13Claims
0Family size
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Key dates
| Filing date | Jan 9, 2003 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Jan 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.