Patent · US Expired

Apparatus and method of forming a device layer

US6964894B2 · kind B2 · utility

8Cited by
5References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 23, 2003
Grant dateNov 15, 2005
Priority date
Expiry dateJun 23, 2023

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C1/00238
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method of forming a MEMS device produces a device layer wafer having a pre-formed conductive pathway before coupling it with a handle wafer. To that end, the method produces the noted device layer wafer by 1) providing a material layer, 2) coupling a conductor to the material layer, and 3) forming at least two conductive paths through at least a portion of the material layer to the conductor. The method then provides the noted handle wafer, and couples the device layer wafer to the handle wafer. The wafers are coupled so that the conductor is contained between the material layer and the handle wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.