Semi-insulating silicon carbide produced by Neutron transmutation doping
US6964917B2 · kind B2 · utility
6Cited by
15References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2003 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Apr 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of 31P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.