Jason Jenny
19Patents
9h-index
25Co-inventors
64Inventor score
Filing activity: Jun 24, 2002 → Aug 30, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6814801B2 | Method for producing semi-insulating resistivity in high purity silicon carbide crystals | Chemistry; Metallurgy | 35 | Expired |
| US7316747B2 | Seeded single crystal silicon carbide growth and resulting crystals | Electricity | 25 | Expired |
| US7323051B2 | One hundred millimeter single crystal silicon carbide wafer | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7601441B2 | One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6974720B2 | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby | Electricity | 15 | Expired |
| US7147715B2 | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen | Chemistry; Metallurgy | 14 | Expired |
| US8147991B2 | One hundred millimeter single crystal silicon carbide wafer | Emerging Cross-Sectional Technologies | 14 | Active |
| US7220313B2 | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient | Emerging Cross-Sectional Technologies | 10 | Expired |
| US9099377B2 | Micropipe-free silicon carbide and related method of manufacture | Emerging Cross-Sectional Technologies | 9 | Active |
| US8410488B2 | Micropipe-free silicon carbide and related method of manufacture | Emerging Cross-Sectional Technologies | 9 | Active |
| US7414268B2 | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities | Electricity | 7 | Expired |
| US7391057B2 | High voltage silicon carbide devices having bi-directional blocking capabilities | Electricity | 7 | Active |
| US6964917B2 | Semi-insulating silicon carbide produced by Neutron transmutation doping | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7323052B2 | Apparatus and method for the production of bulk silicon carbide single crystals | Emerging Cross-Sectional Technologies | 6 | Expired |
| US9059118B2 | Method for producing semi-insulating resistivity in high purity silicon carbide crystals | Chemistry; Metallurgy | 6 | Active |
| US7319518B2 | Double side polished wafer scratch inspection tool | Physics | 2 | Expired |
| US7615801B2 | High voltage silicon carbide devices having bi-directional blocking capabilities | Electricity | 1 | Active |
| US8618553B2 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Chemistry; Metallurgy | 1 | Active |
| US7811943B2 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.