Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask
US6964928B2 · kind B2 · utility
33Cited by
14References
20Claims
0Family size
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Oct 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removal of residue after plasma etching a film stack comprising a patterned photoresist material layer, a hard mask layer, a conductive layer, and a magnetic layer, wherein the patterned photoresist material layer and the hard mask layer form a dual mask. The method cleans a substrate containing the film stack after the dual mask of the film stack has been etched to remove residue produced during the etching process. The cleaning step is performed in a solution comprising hydrogen peroxide and ammonium hydroxide that removes the residue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.