Bulk node biasing method and apparatus
US6965263B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2002 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Oct 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A biasing circuit with application to a charge pump environment for coupling the appropriate terminal voltage potentials to the bulk node. Specifically, a pass gate, such as a transistor of an integrated circuit, operates to isolate a boosted voltage input from a boosting device such as a charge pump voltage doubler and to transfer or pass the related charge to an output that is coupled to a charge store. The input and output of the pass gate are subjected to variations in voltage levels creating transient voltage potential relationships between the input (e.g., source), the output (e.g., drain), and the pass gate substrate (e.g., bulk node). Such fluctuations are accommodated through continuous monitoring of the input and output terminals and, when appropriate, coupling the corresponding potential as exhibited at one of the input or output terminals to the substrate or bulk node of the pass gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.