Method for characterizing and simulating a chemical mechanical polishing process

US6965809B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Dickenscheid · Dresden, DE
• Frank Meyer · Essen, DE
• Stephanie Delage · Paris, FR
• Gotz Springer · Dresden, DE

Key dates

• Filing date: Jun 27, 2003
• Grant date: Nov 15, 2005
• Expiry date: Sep 4, 2023

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B24B37/042
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A method for characterizing and simulating a CMP process, in which a substrate to be polished, in particular a semiconductor wafer, is pressed onto a polishing cloth and is rotated relative to the latter for a defined polishing time. The method includes defining a set of process parameters, in particular a compressive force and a relative rotational speed between a substrate and polishing cloth; preparing and characterizing a test substrate having test patterns with different structure densities using the defined process parameters; determining a set of model parameters for simulating the CMP process from results of the characterization of the test substrate; determining layout parameters of the substrate which is to be polished; defining a profile of demands for a CMP process result for the substrate to be polished; and simulating the CMP process in order to determine the polishing time required to satisfy the profile of demands.