Method and structure for improved trench processing
US6967136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2003 |
| Grant date | Nov 22, 2005 |
| Priority date | — |
| Expiry date | Aug 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0383
Abstract
A method is provided for making a trench capacitor by forming a trench in a substrate. The trench is then widened and a sacrificial collar is formed on sidewalls of the widened trench. The trench is then vertically deepened to extend below the sidewalls of the sacrificial collar. Subsequently, a capacitor is formed in the trench below the sacrificial collar. An integrated circuit includes a deep trench structure formed in a single-crystal region of a semiconductor substrate including an upper trench portion, the upper trench portion having an opening of rectangular shape. A lower trench portion is formed below the upper trench portion. The lower portion may be widened to have a bottle shape. Alternatively, the upper trench portion may be widened relative to the lower trench portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.