Electrically programmable memory element with improved contacts
US6969866B1 · kind B1 · utility
149Cited by
9References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1999 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Mar 25, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.