Method of manufacturing a semiconductor device capable of etching a multi-layer of organic films at a high selectivity
US6972453B2 · kind B2 · utility
6Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2002 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Dec 4, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, with respect to a stacked film including a silicon included organic film and a silicon non-included organic film, the silicon non-included organic film is etched by using the etching gas of mixed N2 gas and H2 gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.