Increasing the read signal in ferroelectric memories
US6972983B2 · kind B2 · utility
9Cited by
8References
32Claims
0Family size
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Key dates
| Filing date | Mar 21, 2002 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Mar 21, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Improved sensing of ferroelectric memory cells is disclosed. When a memory access is initiated, the bitlines are precharged to a negative voltage, for example, −0.5 to −1.0V. This increases the effective plateline pulse (VPLH) to VPLH+the magnitude of the negative voltage. This results in an increase in the difference between VHI and VL0 read signals, thereby increasing the sensing window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.