Patent · US Expired

Silicon resist for photolithography at short exposure wavelengths and process for making photoresists

US6974655B2 · kind B2 · utility

0Cited by

10References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jörg Rottstegge · Erlangen, DE
Christoph Hohle · Bubenreuth, DE
Christian Eschbaumer · Arnstorf, DE
Michael Sebald · Waischenfeld, DE
Wolf-Dieter Domke · Höchstadt an der Aisch, DE

Key dates

Filing date	Sep 3, 2002
Grant date	Dec 13, 2005
Priority date	—
Expiry date	Jun 28, 2023

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S430/115
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.