Christian Eschbaumer
10Patents
2h-index
10Co-inventors
37Inventor score
Filing activity: Jun 28, 2002 → Oct 31, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6893972B2 | Process for sidewall amplification of resist structures and for the production of structures having reduced structure size | Electricity | 192 | Expired |
| US6770423B2 | Negative resist process with simultaneous development and silylation | Physics | 3 | Expired |
| US7052820B2 | Silicon-containing resist for photolithography | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6806027B2 | CHEMICALLY AMPLIFIED PHOTORESIST AND PROCESS FOR STRUCTURING SUBSTITUENTS USING TRANSPARENCY ENHANCEMENT OF RESIST COPOLYMERS FOR 157 NM PHOTOLITHOGRAPHY THROUGH THE USE OF FLUORINATED CINNAMIC ACID DERIVATIVES | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7041426B2 | Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithography | Emerging Cross-Sectional Technologies | 1 | Expired |
| US6946236B2 | Negative resist process with simultaneous development and aromatization of resist structures | Physics | 1 | Expired |
| US6759184B2 | Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7045273B2 | Process for silylating photoresists in the UV range | Physics | 0 | Expired |
| US6974655B2 | Silicon resist for photolithography at short exposure wavelengths and process for making photoresists | Emerging Cross-Sectional Technologies | 0 | Expired |
| US7033740B2 | Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nm | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.