Method for making a semiconductor device having a metal gate electrode
US6974764B2 · kind B2 · utility
22Cited by
25References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2003 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Nov 6, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming a first metal layer on a first part of the dielectric layer, leaving a second part of the dielectric layer exposed. After a second metal layer is formed on both the first metal layer and the second part of the dielectric layer, a masking layer is formed on the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.