Adjusting the frequency of film bulk acoustic resonators
US6975184B2 · kind B2 · utility
11Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2003 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Oct 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/0435
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A material may be removed from the top electrode of a film bulk acoustic resonator to alter the mass loading effect and to adjust the frequency of one film bulk acoustic resonator on a wafer relative to other resonators on the same wafer. Similarly, the piezoelectric layer or the bottom electrode may be selectively milled with a focused ion beam to trim the resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.