Magnetic random access memory using memory cells with rotated magnetic storage elements
US6975555B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Dec 13, 2005 |
| Priority date | — |
| Expiry date | Oct 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory circuit comprises a plurality of magnetic memory cells, each of the memory cells including a magnetic storage element having an easy axis and a hard axis associated therewith, and a plurality of column lines and row lines for selectively accessing one or more of the memory cells, each of the memory cells being proximate to an intersection of one of the column lines and one of the row lines. Each of the magnetic memory cells is arranged such that the easy axis is substantially parallel to a direction of flow of a sense current and the hard axis is substantially parallel to a direction of flow of a write current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.