Schottky with thick trench bottom and termination oxide and process for manufacture
US6977208B2 · kind B2 · utility
15Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 27, 2004 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.