Method for forming bit line contact hole/contact structure
US6977210B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2004 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method for forming a bit line contact hole/contact structure. The method of the present invention includes steps of providing a substrate; forming a plurality of word line structures on the substrate; forming a doped dielectric layer on the substrate having the word line structures formed thereon; defining a position for forming a bit line contact hole; removing the doped dielectric layer other than the portion at the position for forming the bit line contact hole; forming a non-doped dielectric layer on the substrate having the word line structures and residual doped dielectric layer formed thereon; removing the residual doped dielectric layer by using an etchant with a high selectivity for doped dielectric layer/non-doped dielectric layer to form a bit line contact hole; and filling the bit line contact hole with conductive material to form a bit line contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.