Aluminum-filled via structure with barrier layer
US6977217B1 · kind B1 · utility
2Cited by
14References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2002 |
| Grant date | Dec 20, 2005 |
| Priority date | — |
| Expiry date | Jan 21, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a via structure includes a liner, a barrier layer over the liner, and an aluminum layer over the barrier layer. The barrier layer helps minimize reaction between the aluminum layer and the liner, thus helping minimize void formation in the via. The liner and the barrier layer may be deposited in-situ by ionized metal plasma (IMP) physical vapor deposition (PVD). In one embodiment, the liner comprises titanium, while the barrier layer comprises titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.