Copper interconnects with metal capping layer and selective copper alloys
US6979625B1 · kind B1 · utility
34Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2003 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Jan 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High reliable copper interconnects are formed with copper or a low resistivity copper alloy filling relatively narrow openings and partially filling relatively wider openings and a copper alloy having improved electromigration resistance selectively deposited in the relatively wider openings. The filled openings are recessed and a metal capping layer deposited followed by CMP. The metal capping layer prevents diffusion along the copper-capping layer interface while the copper alloy filling the relatively wider openings impedes electromigration along the grain boundaries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.