Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US6979863B2 · kind B2 · utility
197Cited by
76References
49Claims
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Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices have a silicon carbide DMOSFET and an integral silicon carbide Schottky diode configured to at least partially bypass a built in diode of the DMOSFET. The Schottky diode may be a junction barrier Schottky diode and may have a turn-on voltage lower than a turn-on voltage of a built-in body diode of the DMOSFET. The Schottky diode may have an active area less than an active area of the DMOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.