Non-volatile SRAM
US6980459B2 · kind B2 · utility
18Cited by
8References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2002 |
| Grant date | Dec 27, 2005 |
| Priority date | — |
| Expiry date | Nov 11, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A SRAM cell wherein the pull up load of the cell is inherent ferroelectric leakage. The power down writeback may include boosting the word line. The power down writeback may also include discharging the plate from VDD to ground. Furthermore, the plate is held high during read and write operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.