Method and system for determining optimum optical proximity corrections within a photolithography system
US6982136B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 15, 2004 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | Oct 15, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
For determining optimum optical proximity corrections (OPCs) for a mask pattern, mask areas are formed on a reticle with each mask area having the mask pattern of polygons that are modified with respective OPCs perturbations. A respective patterned area is fabricated on a semiconductor wafer from each mask area of the reticle. A respective microscopy image of each respective patterned area is generated to determine a respective error function for each mask area by comparing a desired image of the mask pattern and the respective microscopy image. The optimum OPCs are determined as the respective OPCs perturbations corresponding to one of the mask areas having the respective error function that is a minimum of the mask areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.