Method of forming a super-junction semiconductor device
US6982193B2 · kind B2 · utility
19Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2004 |
| Grant date | Jan 3, 2006 |
| Priority date | — |
| Expiry date | May 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
In one embodiment, a transistor is formed to have alternating depletion and conduction regions that are formed by doping the depletion and conduction regions through an opening in a substrate of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.