Methods of forming capacitor constructions
US6984301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2002 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Nov 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a single mask, and accordingly can be considered to be self-aligned relative to one another. A first electrically conductive material is formed over the first region, and a second electrically conductive material is formed over the second region. The first and second electrically conductive materials are exposed to an electrolytic solution while providing electrical current to the first and second electrically conductive materials. A desired substance is selectively electroplated onto the first electrically conductive material during the exposing of the first and second electrically conductive materials to the electrolytic solution. The invention also includes methods of forming capacitor constructions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.