Method of fabricating a MRAM device
US6984530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2004 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Apr 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A method of fabricating a magnetic random access memory (MRAM) device is disclosed. The method reduces the number of mask steps and processing steps required to fabricate the MRAM device. A first conductive layer and a sense layer are patterned in a first mask step. A subsequent etching step forms a bottom electrode and a sense layer that are continuous with each other in a first direction. A second conductive layer and a plurality of layers of material required to form a magnetic tunnel junction stack are patterned in a second mask step. A subsequent etching step forms a top electrode and a plurality of layers of material that are continuous with each other in a second direction, and a plurality of discrete sense layers. The discrete sense layers and the plurality of layers of material define a plurality of magnetic tunnel junction devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.