Method and device for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal
US6984534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2004 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | May 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/401
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method for detecting whether the alignment of bit line contacts and active areas in DRAM devices is normal, and a test device thereof. In the present invention a plurality of memory cells are formed in the memory area and at least one test device is formed in the scribe line region simultaneously. A first resistance and a second resistance are detected by the test device. Normal alignment of the bit line and the bar-type active area of the test device is determined according to the first resistance and the second resistance. Finally, whether the alignment of the bit line contacts and the active areas in memory areas is normal is determined according to whether the alignment of the bit line contact and bar-type active area of the test device is normal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.