Method for manufacturing a gallium nitride group compound semiconductor

US6984536B2 · kind B2 · utility

Assignees

• TOYODA GOSEI CO., LTD. · JP
• Japan Science and Technology Agency · JP
• NAGOYA UNIVERSITY · JP

Inventors

• Katsuhide Manabe · Ichinomiya, JP
• Akira Mabuchi · Nagoya, JP
• Hisaki Kato · Hamamatsu, JP
• Michinari Sassa · Miyoshi, JP
• Norikatsu Koide · Nara, JP
• Shiro Yamazaki · Fukushima, JP
• Masafumi Hashimoto · Tokyo, JP
• Isamu Akasaki · Nagoya, JP

Key dates

• Filing date: Jan 23, 2002
• Grant date: Jan 10, 2006
• Expiry date: Apr 21, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8215

Abstract

Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled…