Patent · US Expired

Cobalt silicide fabrication using protective titanium

US6984574B2 · kind B2 · utility

2Cited by
15References
38Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 23, 2002
Grant dateJan 10, 2006
Priority date—
Expiry dateJan 23, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/2855
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A cobalt silicide fabrication process entails first depositing a cobalt layer (120) on a silicon-containing EPROM region. A titanium layer (130) is formed over the cobalt layer by ionized physical vapor deposition (“IPVD”) to protect the cobalt layer from contaminant gases. Cobalt of the cobalt layer is reacted with silicon of the EPROM region to form a cobalt silicide layer (210) after which the titanium layer and any unreacted cobalt are removed. Use of IPVD to form the titanium layer by improves the step coverage to produce a better cobalt silicide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.