Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layers
US6984577B1 · kind B1 · utility
26Cited by
14References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 20, 2000 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | Sep 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A damascene interconnect that reduces interconnect intra-layer capacitance and/or inter-layer capacitance is provided. The damascene interconnect structure has air gaps between metal lines and/or metal layers. The interconnect structure is fabricated to a via level through a processing step prior to forming contact vias, then one or more air gaps are formed into the damascene structure so that the air gaps are positioned between selected metal lines. A sealing layer is then deposited over the damascene structure to seal the air gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.