Patent · US Expired

Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer

US6984585B2 · kind B2 · utility

22Cited by

18References

26Claims

0Family size

Inventors

Chentsau Ying · Cupertino, US
Xiaoyi Chen · Mountain View, US
Padmapani Nallan · San Jose, US
Ajay Kumar · Fairport, US

Key dates

Filing date	Aug 12, 2002
Grant date	Jan 10, 2006
Priority date	—
Expiry date	Jan 11, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31133
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for removal of residues after plasma etching a film stack comprising a first layer and a sacrificial layer. The method treats a substrate containing the film stack after the first layer of the film stack has been etched to remove residue produced during the etching process. The treatment is performed in a buffered oxide etch wet dip solution that removes the residue and the sacrificial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.