System and method for one-time programmed memory through direct-tunneling oxide breakdown
US6985387B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2004 |
| Grant date | Jan 10, 2006 |
| Priority date | — |
| Expiry date | May 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A one-time programming memory element, capable of being manufactured in a 0.13 μm or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current. Also included is a write circuit, having first and second switches coupled to the capacitor, and a read circuit also coupled to the capacitor. The capacitor/transistor is one-time programmable as an anti-fuse by application of a program voltage across the oxide layer via the write circuit to cause direct gate tunneling current to rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.