ZnO based compound semiconductor light emitting device and method for manufacturing the same
US6987029B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 17, 2003 |
| Grant date | Jan 17, 2006 |
| Priority date | — |
| Expiry date | Feb 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.