Methods for deposition of semiconductor material
US6987055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2004 |
| Grant date | Jan 17, 2006 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a method for selective deposition of semiconductor material. A substrate is placed within a reaction chamber. The substrate comprises a first surface and a second surface. The first and second surfaces are exposed to a semiconductor material precursor under conditions in which growth of semiconductor material from the precursor comprises a lag phase prior to a growth phase, and under which it takes longer for the growth phase to initiate on the second surface than on the first surface. The exposure of the first and second surfaces is conducted for a time sufficient for the growth phase to occur on the first surface, but not long enough for the growth phase to occur on the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.