Forming a contact in a thin-film device
US6989327B2 · kind B2 · utility
5Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2004 |
| Grant date | Jan 24, 2006 |
| Priority date | — |
| Expiry date | Apr 25, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.