Method for producing a low defect homogeneous oxynitride
US6991987B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2002 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Nov 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process technology effectuates production of low defect homogeneous oxynitride, which can be applied in tunneling dielectrics with high dielectric constants and low barrier heights for flash memory devices, and as gate oxide for ultra-thin logic devices. The process technology involves varying the oxygen content in a the homogeneous oxynitride film comprising a part of the flash memory device, which effectively increases the dielectric constant of the oxynitride film and lowers its barrier height. In one such process, a controlled co-flow of N2O is introduced into a CVD deposition process. This process effectuates production of a oxynitride film with uniform distributions of nitrogen and oxygen throughout.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.