Ion beam measurement systems and methods for ion implant dose and uniformity control
US6992309B1 · kind B1 · utility
22Cited by
19References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Jan 31, 2006 |
| Priority date | — |
| Expiry date | Aug 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.