Method for fabricating semiconductor device capable of preventing damage by wet cleaning process
US6995056B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2004 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Jul 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process. The method includes the steps of: forming a plurality of conductive structures on a substrate; forming an etch stop layer and a flowable insulation layer on the plurality of conductive structures subsequently; forming a photoresist pattern on the flowable insulation layer; forming a plurality of contact holes by etching the flowable insulation layer with use of the photoresist pattern as an etch mask, thereby exposing portions of the etch stop layer; forming at least one barrier layer on the contact holes; removing said at least one barrier layer and the etch stop layer disposed at each bottom portion of the contact holes to thereby expose the substrate; and cleaning the contact holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.