Ferromagnetic double tunnel junction element with asymmetric energy band
US6995962B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2004 |
| Grant date | Feb 7, 2006 |
| Priority date | — |
| Expiry date | Oct 20, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3954
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.