Chemical vapor deposition methods utilizing ionic liquids
US6998152B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Feb 14, 2006 |
| Priority date | — |
| Expiry date | Apr 23, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides methods and apparatus for vaporizing and transporting precursor molecules to a process chamber for deposition of thin films on a substrate. The methods and apparatus include CVD solvents that comprise ionic liquids. The ionic liquids comprise salt compounds that have substantially no measurable vapor pressure (i.e., less than about 1 Torr at about room temperature), exhibit a wide liquid temperature range (i.e., greater than about 100° C.), and have low melting points (i.e., less than about 250° C.). A desired precursor is dissolved in a selected CVD solvent comprising an ionic liquid. The solvent and precursor solution is heated to or near the precursor volatilization temperature of the precursor. A stream of carrier gas is directed over or is bubbled through the solvent and precursor solution to distill and transport precursor molecules in the vapor phase to a deposition chamber. Conventional deposition processes may be used to deposit the desired thin film on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.