Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures

US7001854B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• George D. Papasouliotis · Fishkill, US
• Md Sazzadur Rahman · Sherwood, US
• Pin Sheng Sun · San Jose, US
• Karen Prichard · Los Gatos, US
• Lauren Hall · La Puente, US
• Vikram Singh · North Andover, US

Key dates

• Filing date: Oct 11, 2002
• Grant date: Feb 21, 2006
• Expiry date: May 9, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.