Cross point resistive memory array
US7002197B2 · kind B2 · utility
92Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Feb 21, 2006 |
| Priority date | — |
| Expiry date | May 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A cross point resistive memory array has a first array of cells arranged generally in a plane. Each of the memory cells includes a memory storage element and is coupled to a diode. The diode junction extends transversely to the plane of the array of memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.