Method of forming through-the-wafer metal interconnect structures

US7005388B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Peter J. Hopper · San Jose, US
• Vladislav Vashchenko · Palo Alto, US
• Peter Johnson · Sunnyvale, US
• Robert Drury · Santa Clara, US

Key dates

• Filing date: Dec 4, 2003
• Grant date: Feb 28, 2006
• Expiry date: Dec 23, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/131
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor die is formed in a process that forms a hole through the wafer prior to the formation of the contacts and the metal-1 layer of an interconnect structure. The through-the-wafer hole is formed by using a wafer with a <110> crystallographic orientation and a wet etch, such as with ethanol (KOH) or tetramethylammonium hydroxide (TMAH).